RLE Recent Papers

DISC-FETs: Dual Independent Stacked Channel Field-Effect Transistors

Pritpal S. Kanhaiya, Gage Hills, Dimitri A. Antoniadis, and Max M. Shulaker

DOI: 10.1109/LED.2018.2851191


We experimentally demonstrate a three-dimensional (3D) field-effect transistor (FET) architecture leveraging emerging nanomaterials: Dual Independent Stacked Channel FET (DISC-FET). DISC-FET is comprised of two FET channels vertically integrated on separate circuit layers separated by a shared gate. This gate modulates the conductance of both FET channels simultaneously, although the stacked channels are independent, i.e., n-type or p-type with separate source and drain terminals separately accessed via routing. This 3D FET architecture enables new opportunities for area-efficient 3D circuit layouts. The key to enabling DISC-FET is low temperature processing to avoid damaging lower-layer circuits during upper-layer circuit fabrication. As a case study, we use carbon nanotube (CNT) FETs (CNFETs) since they can be fabricated at low temperature (e.g., <250 °C). We demonstrate wafer-scale CMOS CNFET-based digital logic circuits: 2-input “not-or” (NOR2) logic gates designed using DISC-FETs with independent NMOS CNT channels below and PMOS CNT channels above a shared gate. Our NOR2 gates achieve: 1) average output voltage (VOUT) range of 94% of the supply voltage (VDD) for input voltage (VIN) ranging from 0 V to VDD. 2) output gain (maximum value of -ΔVOUT/ΔVIN) of 6.3. 3) logic gate-level hysteresis of 2.4% VDD, measured as the difference in VIN at which VOUT = VDD/2 between forward and reverse sweeps of VIN. All statistics are averaged over 500 NOR2 gates measured with VDD = 1 V. This work highlights the potential of 3D integration not only for enabling new 3D system architectures, but also new 3D FET architectures and 3D circuit layouts.