RLE
Establishes new MIT Scanning-Electron-Beam Lithography
(SEBL) Facility
New facility to be a resource for MIT
researchers in nanoscience and device fabrication
For Immediate Release
MONDAY, 1 January 2004
Contact: William Smith, Assistant
Director for Finance and Sponsor
Relations
Phone: +1.617.253.5621
Email: whs@mit.edu
CAMBRIDGE, MA. 01.01.2004
The Research Laboratory
of Electronics (RLE) at the Massachusetts Institute
of Technology (MIT) announces the establishment
of a new MIT Scanning-Electron-Beam Lithography (SEBL)
Facility. The SEBL Facility enables the writing
of patterns of arbitrary geometries with minimum features
as fine as 17 nm. The facility includes two SEBL
systems, a VS 26 and a Raith 150. The former was
developed at IBM Research Center specifically for e-beam
lithography and operates at 50 keV. The Raith
150 is an SEM modified for e-beam lithography and
has a maximum operating voltage of 30 keV.
The SEBL Facility, an outgrowth of capabilitis
developed by the RLE NanoStructures Laboratory
(NSL) directed by Professor Henry
I. Smith, has
been created with broad support at MIT from research
organizations working in nanoscale science and
engineering, in device development, and in materials
sciences. In addition to RLE, sponsors include
MIT's Center for Bits and Atoms, Center for Materials
Science and Engineering, the Department of Electrical
Engineering and Computer Science, the Department
of Mechanical Engineering, the Department of Physics,
the Institute for Soldier Nanotechnologies, and
the Microsystems Technology Laboratories.
The Facilities Manager is Mark K. Mondol, who
can be contacted at +1.617.253.9617 or sebl@rle.mit.edu.
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