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ABOUT THE GROUP
The emphasis of research in the RLE Integrated Photonic Devices and Materials group is the design, epitaxial growth, device fabrication and characterization of a number of photonic and opto-electronic structures and devices. The epitaxial growth of the heterostructures is performed in the laboratory consisting of two gaseous source epitaxy reactors
interconnected to several smaller chambers, which are used for sample introduction and in-situ surface
analysis. The facilities of the group features a state-of-the-art solid source, dual-reactor molecular beam epitaxy
system. The new system allows for the epitaxial growth of dilute nitrides and antimony-based films in addition to arsenide- and phosphide-based films. The system platens hold multiple 3" or 4" wafers, or a single 6" or 8" wafer. The system incorporates a low wobble manipulator that will enable in-situ feedback control of the epitaxial processes using optical sensors such as band edge absorption and spectroscopic
ellipsometry.
CURRENT PROGRESS REPORT CHAPTERS
2006 | No. 148
Integrated Photonic Devices and Materials
2005 | No. 147
Integrated Photonic Devices and Materials
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CURRENT RLE AT MIT NEWS ARTICLES
2003 February Issue 2
Integrated Photonic Devices and Materials: An Interview with Leslie A. Kolodziejski
CURRENT GROUP NEWS
11.09.2005
DARPA names Prof. Ippen to lead $9.5 million project
>> more News
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