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Massachusetts Institute of Technology |
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The
scanning-electron-beam lithography (SEBL) facility enables the writing of patterns
of arbitrary geometries with minimum features as fine as 17 nm. The facility
includes two SEBL systems, a VS 26 and a Raith 150. The former was developed
at IBM Research Center specifically for e-beam lithography and operates at 50
keV. The Raith 150 is an SEM modified for e-beam lithography and has a maximum
operating voltage of 30 keV.