Home :: Facility Procedures :: Schedule :: Images :: Sponsors :: Contact
MIT's Scanning-Electron-Beam Lithography Facility
Room 38-177 / / 617.253.9617
  © Massachusetts Institute of Technology  
Link: Research Laboratory of Electronics at MIT Link: MIT
Click to email
The scanning-electron-beam lithography (SEBL) facility enables the writing of patterns of arbitrary geometries with minimum features as fine as 17 nm. The facility includes two SEBL systems, a VS 26 and a Raith 150. The former was developed at IBM Research Center specifically for e-beam lithography and operates at 50 keV. The Raith 150 is an SEM modified for e-beam lithography and has a maximum operating voltage of 30 keV.