The Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) announces the establishment of a new MIT Scanning-Electron-Beam Lithography (SEBL) Facility. The SEBL Facility enables the writing of patterns of arbitrary geometries with minimum features as fine as 17 nm. The facility includes two SEBL systems, a VS 26 and a Raith 150. The former was developed at IBM Research Center specifically for e-beam lithography and operates at 50 keV. The Raith 150 is an SEM modified for e-beam lithography and has a maximum operating voltage of 30 keV.
The SEBL Facility, an outgrowth of capabilitis developed by the RLE NanoStructures Laboratory (NSL) directed by Professor Henry I. Smith, has been created with broad support at MIT from research organizations working in nanoscale science and engineering, in device development, and in materials sciences. In addition to RLE, sponsors include MIT’s Center for Bits and Atoms, Center for Materials Science and Engineering, the Department of Electrical Engineering and Computer Science, the Department of Mechanical Engineering, the Department of Physics, the Institute for Soldier Nanotechnologies, and the Microsystems Technology Laboratories.
The Facilities Manager is Mark K. Mondol, who can be contacted at +1.617.253.9617 or email@example.com.