Tarek A. El-Moselhy, Ibrahim M. Elfadel, and Luca Daniel
Lithographic limitations and manufacturing uncertainties are resulting in fabricated shapes on wafer that are topologically equivalent, but geometrically different from the corresponding drawn shapes. While first-order sensitivity information can measure the change in pattern parasitics when the shape variations are small, there is still a need for a high-order algorithm that can extract parasitic variations incrementally in the presence of a large number of simultaneous shape variations. This paper proposes such an algorithm based on the wellknown method of floating random walk (FRW). Specifically, we formalize the notion of random path sharing between several conductors undergoing shape perturbations and use it as a basis of a fast capacitance sensitivity extraction algorithm and a fast incremental variational capacitance extraction algorithm. The efficiency of these algorithms is further improved with a novel FRW method for dealing with layered media. Our numerical examples show a 10X speed up with respect to the boundaryelement method adjoint or finite-difference sensitivity extraction, and more than 560X speed up with respect to a non-incremental FRW method for a high-order variational extraction.