Let’s Design the Structural-Defect Twists in Solid State Materials:  Strained Architectures for Novel Electronics and Energy Conversion Devices

Dr. Jennifer Rupp
ETH, Zurich
Seminar: Noon, Thursday, March 26th, Chipman Room (6–104)

The next generation of energy conversion and storage devices, information memories and neuromorphic computer logics in electronics rely largely on solving fundamental questions of mass and charge transport of oxygen ionic defects in materials and their structures. Here, understanding the defect kinetics in the solid state material building blocks and their interfaces with respect to lattice and interfacial strains are the prerequisite to design new material properties beyond classic doping. Through this presentation basic theory and model experiments for solid state electro-chemo-mechanics and lattice strain modulations is being discussed as a new route for tuning material and properties in ionic conducting oxide film structures up to new device prototypes. Central are the making and manipulation of the mechanics in solid state ionic conducting heterostructures, in-situ spectroscopic and microscopic techniques coupled with electrochemical micro-measurements to probe near order structural bond strength changes relative to ionic and electronic diffusion kinetics and the materials integration to new optimized device architectures and operation schemes.

We will discuss basic fundamentals of oxygen ionic transport under strain for heterostructures and exemplify their impact on novel classes of electrochemical devices such as for energy harvesting: “Micro-Energy Conversion Membranes under Tuned Strain Fields”, and for innovative types of ionically-operated data storage and logics: “Strained Memristor micro-Dots for Information Storage” or “Oxygen-Ionic Controlled Non-Binary Transfer Logics to replace Electronically Operated Transistors”.

  1. The Effect of Mechanical Twisting on Oxygen Ionic Transport in Solid State Energy Conversion Membranes
    Y. Shi, A.H. Bork, S. Schweiger and J.L.M. Rupp
    Nature Materials, accepted  (2015)
  2. A Micro-Dot Multilayer Oxide Device: Let’s Tune the Strain-Ionic Transport Interaction
    S. Schweiger, M. Kubicek, F. Messerschmitt, C. Murer and J.L.M. Rupp
    ACS Nano, 8, 5, 5032 (2014)
  3. Memristor Kinetics and Diffusion Characteristics for Mixed Anionic-Electronic SrTiO3‑δ: The Memristor-based Cottrell Analysis Connecting Material to Device Performance
    F. Messerschmitt, M. Kubicek, S. Schweiger and J.L.M. Rupp
    Advanced Functional Materials, 24, 47, 7448 (2014)
  4. Patent Application PCT/EP2014/001020: “Strained Multilayer Resistive-switching Memory Elements” (2014)
    J.L.M. Rupp, S. Schweiger, F. Messerschmitt
    Spark award winner: most inventive and economically important patent of the year at ETH Zurich