Leslie A. Kolodziejski

Leslie A. Kolodziejski

Professor of Electrical Engineering, Electrical Engineering and Computer Science (EECS)

77 Massachusetts Avenue
Room 36-287
Cambridge, MA 02139


Administrative Assistant

Cynthia J Higgins
Room 36-812

Leslie A. Kolodziejski is a principal investigator in the Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT). She began her career at Purdue University in 1986 when she joined the Electrical and Computer Engineering Department as Assistant Professor. In 1987, Professor Kolodziejski was awarded the Presidential Young Investigator Award from the National Science Foundation and Young Investigator Award from the Office of Naval Research. In 1988, Professor Kolodziejski joined the Department of Electrical Engineering and Computer Science at MIT. She was honored with the Karl van Tassel Career Development Chair from 1992–3 and with the Esther and Harold E. Edgerton Career Development Chair from 1993–6. Professor Kolodziejski was promoted to Associate Professor in 1992 and full Professor in 1999.

Professor Kolodziejski’s research interests have included the gaseous source epitaxy of both II-VI and III‑V compound semiconductors. Her past work includes the overgrowth of InGaAsP onto patterned surfaces for DFB lasers and WDM filters for all-optical networks, the fabrication of one-dimensional, two-dimensional and threedimensional photonic bandgap devices and structures, the growth and fabrication of novel high power lasers and ultra-low threshold, ultra-efficient co-planar microlasers, and the fabrication and implementation of saturable Bragg reflectors for modelocking of ultrafast fiber lasers. A new project that involves the design and fabrication of semiconductor optical amplifiers integrated within an ultrafast nonlinear interferometer is currently being developed for time-division multiplexing applications. Under the direction of Professor Kolodziejski optoelectronic devices are designed, materials development and growth, and materials characterization is carried out, device fabrication and testing is then completed.

Professor Kolodziejski currently participates in a National Academy of Engineering Committee addressing Advanced Research Instrumentation and Facilities. She is on the Sensors and Electron Devices Panel of the NRC’s Army Research Laboratory’s Technical Assessment Board. In addition, she has carried out the role of Program Chair for numerous conferences such as the North American Molecular Beam Epitaxy Conference and Conference on Lasers and Electrooptics. She was on the Editorial Board of APL and JAP from 2000–2003. Professor Kolodziejski serves as academic advisor and organized a Graduate Women Seminar to mentor and support women graduate students at MIT.


photonic and opto-electronic structures, epitaxial growth, device fabrication, heteroepitaxy, compound semiconductors, electronic materials, opto-electronic devices